collector-emitter voltage vces 600 v dc collector current tc=75c tc=25c i c , nom ic 100 130 a repetitive peak collector cur- rent tp=1msec,tc=75c i crm 200 a total powerdissipation tc=25c p tot 340 w gate-emitter peak voltage v ges +/-20 v dc forward diode current i f 100 a repetitive peak forward current tp=1msec i frm 200 a i 2 t value per diode vr=0v, tp=10msec, tvj=125c i 2 t 1250 a 2 sec isolation test voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -aln isolation maximum rated values/ electrical properties SML100HB06 collector-emitter saturation voltage ic=75a,vge=15v, tc=25c ic=75a,vge=15v,tc=125c v ce(sat) 1.95 2.2 2.45 v gate threshold voltage vce=vge, tvj=25c v ge(th) 4.5 5.5 6.5 v input capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c ies 4.3 nf reverse transfer capacitance f=1mhz,tvj=25c,vce=25v, vge=0v cres 0.4 nf collector emitter cut off current vce=600v,vge=0v,tvj=25c vce=600v,vge=0v,tvj=125c i ces 1 1 500 a gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 a
turn on delay time ic=100a, vcc=300v vge=+/15v,rg=2.2 ? ,tvj=25c vge=+/-15v,rg=2.2 ? ,tvj=125c t d,on 25 26 nsec nsec rise time ic=100a, vcc=300v vge=+/-15v,rg=2.2 ? ,tvj=25c vge=+/-15v,rg=2.2 ? ,tvj=125c tr 10 11 nsec nsec turn off delay time ic=100a, vcc=300v vge=+/-15v,rg=2.2 ? ,tvj=25c vge=+/-15v,rg=2.2 ? ,tvj=125c td,off 130 150 nsec nsec fall time ic=100a, vcc=300v vge=+/-15v,rg=2.2 ? ,tvj=25c vge=+/-15v,rg=2.2 ? ,tvj=125c tf 20 30 nsec nsec turn energy loss per pulse ic=75a,vce=300v,vge=15v rge=2.7 ? ,tvj=125c,l=35nh eon 1.0 mj turn off energy loss per pulse ic=75a,vce=300v, vge=15v rge= ? ,tvj=125c,l=30nh eoff 2.9 mj sc data tp 10sec, vge 15v tvj 125c,vcc=360v,vce(max)- vces-l di/dt isc 450 a stray module inductance l ce 40 nh terminal-chip resistance rc 1.0 m ? forward voltage ic=75a,vge=0v, tc=25c ic=75a,vge=0v, tc=125c v f 1.25 1.2 1.6 v peak reverse recovery current if=75a, -di/dt=3000a/sec vce=300v,vge=-10v,tvj=25c vce=300v,vge=-10v,tvj=125c i rm 150 180 a recovered charge if=75a, -di/dt=3000a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c q r 7.7 13 c reverse recovery energy if=75a, -di/dt=3000a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c e rec 3.2 mj mj diode characteristics
thermal resistance junction to case igbt diode r j-c 0.37 0.67 k/w thermal resistance case to heatsink r c-hs 0.03 k/w maximum junction temperature tvj 150 c maximum operating temperature top -40 125 c storage temperature tstg -40 125 c thermal properties min typ max
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